features 1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt not f or n ew d esi gns rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems SGC-6289Z 50mhz to 3500mhz silicon germanium active bias gain block rfmd?s SGC-6289Z is a high performance sige hbt mmic amplifier utiliz- ing a darlington configuration with an active bias network. the active bias network provides stable current over temperature and process beta varia- tions. designed to run directly from a 5v supply, the SGC-6289Z does not require a dropping resistor as compared to traditional darlington amplifi- ers. the SGC-6289Z product is designed for high linearity 5v gain block applications that require small size and minimal external components. it is internally matched to 50 . gain, rl & nf versus frequency -40 -30 -20 -10 0 10 20 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) db gain irl orl s11 s21 s22 bias tee data, zs = zl = 50 ohms, tl = 25c ? single supply operation: 5v at i d =83ma ? no dropping resistor required ? patented self bias circuitry ? gain=13.5dbm at 1950mhz ? p 1db =19.2dbm at 1950mhz ? ip 3 =33.5dbm at 1950mhz ? robust 1000v esd, class 1c hbm applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? if amplifier ? wireless data, satellite ds100625 not for new designs ? package: sot-89 parameter specification unit condition min. typ. max. small signal gain 14.0 db 500mhz 12.5 14.0 15.5 db 850mhz* 12.0 13.5 15.0 db 1950mhz output power at 1db compression 19.0 dbm 500mhz 19.5 dbm 850mhz 17.7 19.2 dbm 1950mhz output third order intercept point 34.5 dbm 500mhz 34.5 dbm 850mhz 31.5 33.5 dbm 1950mhz input return loss 14.0 18.5 db 1950mhz output return loss 20.0 25.5 db 1950mhz noise figure 3.3 db 1930mhz device operating voltage 5 v device operating current 70 83 96 ma thermal resistance 65 c/w junction to lead test conditions: v d =5.0v, i d =83ma, t l =25c, oip 3 tone spacing=1mhz, *bias tee data, z s =z l =50 , p out per tone=0dbm, application circuit data unless otherwise noted
2 of 8 ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f or n ew d esi gns SGC-6289Z typical rf performance at key operating frequencie s (application circuit data unless otherwise noted) typical performance with bias tees, v d =5v, i d =83ma absolute maximum ratings parameter rating unit max device current (l d )100ma max device voltage (v d )7v max rf input power* (see note) +24 dbm max junction temperature (t j )+150c operating temperature range (t l ) -40 to +85 c max storage temperature +150 c esd rating - human body model (hbm) class 1c moisture sensitivity level msl 2 *note: load condition z l1 =50 *note: z l2 =10:1 vswr operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l and t l =t lead parameter unit 100 mhz* 500 mhz 850 mhz 1950 mhz 2500 mhz 3500 mhz* small signal gain (g) db 15.0 14.0 14.0 13.5 13.2 12.5 output third order intercept point (oip 3 ) dbm 35.5 34.5 34.5 33.5 31.5 28.5 output power at 1db compression (p 1db ) dbm 20.5 19.9 19.5 19.2 17.8 15.8 input return loss (irl) db 23.5 41.0 22.0 18.5 19.0 18.5 output return loss (orl) db 18.5 21.0 19.5 25.5 12.5 8.0 reverse isolation (s 12 ) db 18.0 18.5 18.5 19.5 19.5 19.9 noise figure (nf) db 3.3 3.2 3.4 3.3 3.5 4.3 test conditions: v d =5v i d =83ma oip 3 tone spacing=1mhz, p out per tone=0dbm t l =25c z s =z l =50 , *bias tee data caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. oip3 versus frequency (0 dbm tones) 28.0 30.0 32.0 34.0 36.0 38.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) oip3 (dbm) -40c +25c +85c p1db versus frequency 14 16 18 20 22 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) p1db (dbm) -40c +25c +85c
3 of 8 not f or n ew d esi gns ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGC-6289Z typical performance with bias tees, v d =5v, i d =83ma noise figure versus frequency 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.00.51.01.52.02.53.03.5 frequency (ghz) nf (db) +25c +85c dciv 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v ce (v) i d (ma) -40c +25c +85c s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.00.51.01.52.02.53.03.5 frequency (ghz) s11 (db) -40c 25c 85c s21 versus frequency 8 10 12 14 16 18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) gain (db) -40c 25c 85c s12 versus frequency -30 -25 -20 -15 -10 -5 0 0.00.51.01.52.02.53.03.5 frequency (ghz) s12 (db) -40c 25c 85c s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.00.51.01.52.02.53.03.5 frequency (ghz) s22 (db) -40c 25c 85c
4 of 8 ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f or n ew d esi gns SGC-6289Z typical performance with application circuit, v d =5v, i d =83ma oip3 versus frequency (0dbm tones) 28 30 32 34 36 38 0.30.50.70.91.11.31.51.71.92.12.32.5 frequency (ghz) oip3 (dbm) -40c +25c +85c p1db versus frequency 14 16 18 20 22 24 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) p1db (dbm) +25c -40c +85c p out versus p in @ 850mhz 4 6 8 10 12 14 16 18 20 22 24 -10-8-6-4-2 0 2 4 6 81012 power in (dbm) power out (dbm) 74 76 78 80 82 84 86 88 90 92 94 bias (ma) pout_25c pout_-40c pout_85c bias_25c bias_-40c bias_85c p out versus p in @ 2140 mhz 4 6 8 10 12 14 16 18 20 22 24 -10-8-6-4-2 0 2 4 6 81012 power in (dbm) power out (dbm) 74 76 78 80 82 84 86 88 90 92 94 bias (ma) pout_-40c pout_25c pout_85c bias_-40c bias_25c bias_85c noise figure versus frequency 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) nf (db) +25c +85c
5 of 8 not f or n ew d esi gns ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGC-6289Z typical performance with application circuit, v d =5v, i d =83ma s21 versus frequency 8 10 12 14 16 18 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) gain (db) -40c 25c 85c s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) s11 (db) -40c 25c 85c s12 versus frequency -30 -25 -20 -15 -10 -5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) s12 (db) -40c 25c 85c s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) s22 (db) -40c 25c 85c
6 of 8 ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f or n ew d esi gns SGC-6289Z suggested pcb pad layout dimensions in inches (millimeters) package drawing dimensions in inches (millimeters) pin function description 1rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 2, 4 gnd connection to ground. use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum rf performance. 3rf out/ dc bias rf output and bias pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of opera- tion.
7 of 8 not f or n ew d esi gns ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGC-6289Z application schematic evaluation board mounting instructions 1. solder the copper pad on the backside of the device package to the ground plane. 2. use a large ground pad area with many plated through-holes as shown. 3. we recommend 1 or 2 ounce copper. measurements for this data sheet were made on a 31 mil thick fr-4 board with 1 ounce copper on both sides.
8 of 8 ds100625 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f or n ew d esi gns SGC-6289Z part identification part will be identified with ?sgc6289z? trace code. alternate marking is ?c62z?. ordering information part number description reel size devices/reel SGC-6289Z lead free, rohs compliant 13? 3000 SGC-6289Z-evb1 200mhz to 2500mhz eval board n/a n/a
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